Guangzhou: Accelerate the research, development, and production of materials such as photoresists, high-purity chemical reagents, electronic gases, carbon-based materials, and high-density packaging s

【Guangzhou: Accelerate the R&D and Production of Photoresists, High-Purity Chemical Reagents, Electronic Gases, Carbon-Based Materials, High-Density Packaging Substrates, etc.】 Caipiaolou, January 8th. The General Office of the Guangzhou Municipal People's Government has issued the Plan for Building a Strong Advanced Manufacturing City in Guangzhou (2024-2035). The plan points out that it will vigorously develop the manufacturing of third-generation semiconductor materials such as silicon carbide, zinc oxide, and gallium oxide, support the R&D and manufacturing of compound semiconductor devices and modules such as gallium nitride and silicon carbide, accelerate the R&D and production of materials such as photoresists, high-purity chemical reagents, electronic gases, carbon-based materials, and high-density packaging substrates, and foster and expand the development of compound semiconductor IDM (Integrated Device Manufacturing), wide-bandgap semiconductor materials, and enterprises engaged in electronic-grade polycrystalline silicon and wafers. It supports the research and development and transformation of devices such as radio frequency, sensors, nano-ceramic powders, and power electronics, and promotes the application and promotion of compound semiconductor products.

Original article: toutiao.com/article/7592915946226909715/

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