A Chinese research team breaks through the bottleneck in semiconductor memory technology, achieving a hundredfold improvement in the endurance of ferroelectric memory.

Foreign Media: Chinese researchers have achieved a breakthrough in the semiconductor field, enhancing the durability of future memory devices by 100 times.

A research team from Xidian University in collaboration with City University of Hong Kong and Fudan University has published a paper in the journal Science, solving the degradation issue in wurtzite ferroelectric materials after repeated electrical switching by restricting the movement of nitrogen vacancies in scandium aluminum nitride (AlScN).

Previously, this material typically failed after about 100 million write cycles; however, the new method achieves over 10 billion write cycles, meeting the commercial standard of several billion cycles. This advancement clears a key reliability barrier for practical applications of ferroelectric memory in high-performance computing and artificial intelligence systems, and the material is compatible with existing semiconductor manufacturing processes, facilitating future integration.

Original article: toutiao.com/article/1876226779311104/

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