China has taken a leading position worldwide in both directions of gallium oxide.

Foreign media reported that China has achieved breakthroughs in "K-phase gallium oxide," thereby gaining a two-generation advantage over the United States in radar technology. Personally, in the field of radar, the "β-phase gallium oxide" semiconductor is more advantageous; the strengths of "K-phase gallium oxide" are mainly reflected in its potential as a memory chip.

The wide bandgap and high-temperature characteristics of gallium oxide are inherent properties. In this regard, "β-phase gallium oxide" is significantly superior to "K-phase gallium oxide," representing a leap ahead, far surpassing gallium nitride and silicon carbide semiconductors. Therefore, when used in power and radio frequency devices, "β-phase gallium oxide" is undoubtedly the first choice.

Currently, we have a complete 8-inch production process and technology for "β-phase gallium oxide." Radar systems based on this semiconductor have reportedly already been installed and tested. At present, Japan is the most promising country internationally in terms of industrialization, with some capability already established at the 6-inch level. Thus, in this aspect, China is clearly leading by a wide margin—meaning, in a sense, that radar technology has already surpassed the United States by two generations due to material advantages.

Previously, reports indicated that many properties of gallium oxide are similar to those of silicon, including its growth, slicing, polishing, etching, etc., with approximately 75% compatibility in the manufacturing chain with silicon. This implies that its production cost will be close to that of silicon-based chips, creating favorable conditions for large-scale adoption. Moreover, Chinese researchers' development of the memory functions of "K-phase gallium oxide" signifies the beginning of replacing silicon-based chips—what remains is the breakthrough in logic chips.

Original source: toutiao.com/article/1860725902331146/

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