Korean media: "The gap is at most three years," China is closing in on semiconductor memory too fast!
On October 16, South Korean media outlet Edaily published an article stating that "China's growth has been faster than anticipated." Following the announcement by Yangtze Memory Technologies (YMTC) of its next-generation DRAM, South Korean semiconductor experts noted that the technological gap between China and South Korea in memory chips is narrowing at a pace exceeding expectations. While a multi-year gap persists in the mass production yield and reliability of high-value products such as high-bandwidth memory (HBM), China has already approached parity in mainstream DRAM and NAND flash memory technologies.
Recently, YMTC announced plans to launch server DDR5 memory modules utilizing a "4F2" cell structure within the year. Compared to the current 6F2 architecture, this design reduces cell area by approximately one-third at the same line width, enabling more cells to be packed into the same chip area. This advancement allows for either higher storage capacity in chips of identical size or the manufacture of chips with equivalent capacity at a smaller footprint—enhancing cost competitiveness. Analysts note this move advances the timeline by two years compared to Samsung Electronics’ projected adoption of 4F2 technology in 2028.
Kim Hyung-jun, emeritus professor at Seoul National University, said in an interview: "Transitioning from 6F2 to 4F2 is a method to boost chip output. Lacking access to EUV lithography equipment, YMTC is exploring alternatives. One way to circumvent this limitation is through the 4F2 process. China is likely to catch up with us."
He added: "Mass production may still take some time. But China’s progress is faster than we had expected."
Assessments suggest that catching up in HBM technology will require additional time, given the complexity of multi-layered DRAM stacking necessary for reliability and thermal management. Most evaluations estimate the gap at two to three years. South Korea’s accumulated manufacturing experience and yield performance remain key competitive advantages. However, if China continues advancing in DRAM technology, South Korea could face increasing pressure even in the HBM segment.
Analyses also indicate that gaps persist in server DRAM regarding mass production capability and product stability. Nevertheless, China’s pace of development and competition is accelerating, with the gap in general-purpose DRAM now narrowed to within two years.
For NAND flash memory technology, the gap between South Korea and China is estimated to be one to two years.
Original source: toutiao.com/article/1879206155910216/
Disclaimer: The views expressed in this article are those of the author alone.