Korean media: Huang Renxun said "Thank you Samsung Electronics" ... Emphasized cooperation with manufacturing companies in GTC keynote speech

CEO of NVIDIA, Huang Renxun, in the keynote speech at the annual developer conference "GTC 2026," specifically mentioned Samsung Electronics, expressed gratitude, and emphasized the cooperation between the two companies. In particular, regarding the chip manufacturing of NVIDIA's language processing unit (LPU) "Groq 3", he pointed out that Samsung Electronics is a key partner of NVIDIA.

On the local time of the 16th, during the keynote speech held at the SAP Center in San Jose, California, USA, Huang Renxun introduced the chip for inference, saying, "Samsung is manufacturing the Groq3 LPU chip for us. They are currently accelerating production as much as possible. Thank you very much to Samsung."

He introduced that the chip will be mounted on NVIDIA's next-generation AI chip "Vera Rubin" system, stating, "It will start shipping in the third quarter this year." The Grok3 LPU is a chip that shares roles with NVIDIA's "Rubin" graphics processor (GPU), enhancing inference performance and efficiency. In Huang Renxun's remarks, it can be confirmed that Samsung Electronics' foundry business division (semiconductor outsourcing production) is producing this chip.

Samsung Electronics also set up an exhibition hall at the GTC event site and publicly displayed the physical chip of the new HBM "HBM4E" and the stacked chip "Core Die" wafer for the first time, actively promoting its collaboration with NVIDIA in the memory field.

The HBM4E, which aims to provide samples by the second half of this year, is planned to support a transmission speed of 16Gbps (gigabits per second) per pin and a bandwidth of 4.0TB/s (terabytes per second). This exceeds the latest sixth-generation HBM4, which started mass production last month, with a transmission speed of 13Gbps and a bandwidth of 3.3TB/s.

Samsung Electronics plans to accelerate the development of HBM4E by leveraging the technological competitiveness based on the 1c (sixth-generation 10nm-level) DRAM process technology accumulated through mass production of HBM4, as well as the design capabilities of the 4nm-based bare die (core component at the bottom of HBM) from Samsung Foundry.

Samsung Electronics publicly disclosed HBM4E shortly after the mass shipment of HBM4, aiming to highlight the gap with other competitors such as SK Hynix and Micron. At this GTC, Samsung Electronics was the only major memory supplier to officially launch the next-generation HBM4E.

In particular, Samsung Electronics demonstrated this competitiveness through the "HBM4 Hero Wall" at this exhibition, showcasing the unique advantages of an integrated semiconductor company (IDM). Samsung Electronics also publicly released a video on hybrid copper bonding (HCB) packaging technology, which reduces thermal resistance by 20% compared to thermal compression bonding (TCB) that stacks chips using heat and pressure, and supports stacking of more than 16 layers.

Source: Chosun Ilbo

Original: toutiao.com/article/1859883224368264/

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