32GB of memory is priced at only one-third of the market price! Domestic DRAM giant exposes low-price market competition.

Fast Tech, February 4th - At a time when global memory prices are continuously surging, a low-price strategy from China's DRAM giant, ChangXin Memory, has triggered intense conflict between bulls and bears in an already volatile memory market.

According to reports, ChangXin Memory has launched a "break-even price" of $138 for its 32GB DDR4-3200 ECC memory module. This price is only about one-third of the current international market price of $300~$400, instantly causing a global market shock.

This low-price move directly ignited market panic. Investors worried that the memory industry would once again fall into a red ocean competition, and the memory sector, which had shown signs of recovery earlier that day, immediately came under pressure and fell sharply.

In particular, the two DRAM giants, Winbond Electronics and Nanya Technology, were hit hardest, with their shares falling by 9.05% and 5.61%, respectively. Additionally, stocks such as Phison, Pin-An, Jinghao, Shangzhi, Ving, Umax, and Huadong all fell more than half a limit down, creating a strong sense of panic in the sector.

The recent market fluctuations reflect structural changes in the global memory market. With the explosive growth of AI computing demand, the global memory market has entered a new super cycle. By the end of 2025, the prices of related products have already risen significantly, even disrupting the production plans of many electronic products for 2026.

Against this backdrop, Chinese memory giants such as ChangXin Memory and Yangtze Memory are accelerating their strategies to seize market opportunities.

ChangXin Memory, in particular, has decided to accelerate the expansion of its Shanghai factory. According to the plan, the scale of this factory will reach 2 to 3 times that of its headquarters in Hefei, focusing mainly on the production of DRAM products for servers, personal computers, and automotive electronics.

According to the schedule, the equipment installation at the Shanghai factory is expected to start in the second half of 2026, and it will officially enter production in 2027. After production begins, it will significantly enhance ChangXin Memory's supply capacity in the global DRAM market.

China's NAND Flash giant, Yangtze Memory, is also making active efforts. The third phase of its project in Wuhan originally planned to achieve mass production by 2027, but it is now expected to be launched as early as the second half of 2026. More notably, Yangtze Memory plans to adjust its development strategy, allocating approximately 50% of the new factory's capacity to DRAM product production, officially entering a new model of parallel development in both NAND and DRAM fields, further improving the product matrix of China's memory industry.

Regarding the rise of Chinese memory manufacturers and changes in the market landscape, Gary Huang, Asia regional head of Yole Group, analyzed that the current global memory supply remains tight, providing favorable development opportunities for emerging players.

Combined with China's policy support, it is driving more customers to actively seek alternative supply sources. This not only brings new growth momentum to Chinese companies such as ChangXin Memory and Yangtze Memory, but will also profoundly impact the competitive landscape of the global memory market.

Original article: toutiao.com/article/7602905400136729138/

Statement: This article represents the views of the author himself.