South Korean media: China's DRAM and NAND flash production output has almost doubled within a year!
On August 28, the South Korean media "Chosun Ilbo" published an article stating that China's leading memory semiconductor companies, Changxin Memory and Yangtze Memory, have nearly doubled their capacity in just over a year, thus strengthening their influence in the global memory semiconductor market.
Starting with traditional DRAM, Chinese memory products have begun to emerge in the general DRAM market, which has been dominated by Samsung Electronics and SK Hynix for years. Driven by domestic market demand, Chinese memory products are continuously improving their competitiveness. In addition, Chinese memory products are also challenging in advanced product areas such as high-bandwidth memory (HBM) and 300-layer 3D NAND flash, narrowing the gap with Samsung Electronics and SK Hynix.
According to the latest report from market research company Omdia, Changxin Memory's DRAM capacity (calculated by wafer input) expanded by about 70% in the third quarter of this year compared to the same period last year, reaching 720,000 wafers. Annually, it is expected that Changxin Memory's DRAM wafer production will increase from 1.62 million wafers last year to 2.73 million wafers this year.
Just two or three years ago, Changxin Memory's share in the global DRAM market was too small to be quantified, but it has achieved rapid growth in production lines and shipments in a short time. According to Omdia's forecast for next year's shipments, Changxin Memory's DRAM shipments are expected to approach the third-largest company in the industry - Micron from the United States. Therefore, some predict that the existing three major players in the DRAM market (Samsung Electronics, SK Hynix, and Micron) may reorganize into four major players in the future.
Yangtze Memory's NAND flash capacity has also rapidly expanded. Since the first quarter of last year, Yangtze Memory has been rapidly increasing its production at its second factory located in Wuhan, China. In the second quarter of this year, the NAND capacity of Yangtze Memory's second factory in Wuhan was 130,000 wafers, more than doubling compared to the same period last year (60,000 wafers). The overall NAND capacity of Yangtze Memory has also increased by 42% compared to the same period last year.
The two companies are expanding their product portfolios, covering not only general memory and traditional memory, but also advanced product lines. Changxin Memory has also made unexpected progress in the HBM market, which is dominated by SK Hynix. Changxin Memory plans to complete the mass production certification process for its fourth-generation HBM product, HBM3, by the end of this year.
A South Korean semiconductor equipment industry insider explained: "Changxin Memory is actively expanding its factories in Beijing and Hefei, and is expected to invest in HBM packaging facilities in the future. Changxin Memory's internal goal is to achieve mass production of the fifth-generation HBM (HBM3E) within two years, which is an advanced product led by SK Hynix and Micron."
Original: www.toutiao.com/article/1841686887238794/
Statement: This article represents the views of the author.