November 25th news, recently, Changxin Memory officially launched its latest DDR5 and LPDDR5X products, challenging the advanced storage giants in South Korea and the United States.
Details of Changxin Memory's latest products
According to Changxin, the latest DDR5 series has a maximum speed of 8000Mbps, with a maximum chip capacity of 24Gb, both reaching international leading levels. It also simultaneously launched seven module products covering the entire field of servers, workstations, and personal computers.
In addition, Changxin also demonstrated the LPDDR5X product released last month. This series is aimed at flagship products for the mobile market, with a maximum rate of 10667Mbps, a maximum chip capacity of 16Gb, and various packaging solutions including 12GB, 16GB, 24GB, and 32GB.
These numbers mean that the high-end market of DDR5 - especially the field above 7000 Mbps - was once considered the exclusive territory of the three global giants, Samsung, SK Hynix, and Micron. Now, Changxin has broken through this barrier, and Chinese enterprises have formally gained the right to compete equally with international giants.
Market performance and technical evaluation of Changxin Memory
Earlier this year, some DDR5 memory produced by Chinese companies appeared on the market, but this time Changxin Memory officially presented actual products for the first time as a representative.
Industry analysts pointed out that Changxin Memory's displayed memory performance is worth attention. Its DDR5 maximum speed is 8000Mbps, which is a 25% improvement over the previous generation (6400 Mbps). In terms of technical route, it has at least caught up with South Korean companies. Industry experts believe that Changxin Memory's performance is sufficient to be used in servers equipped with the most advanced CPUs.
According to data from the Korean media Business Korea citing Nikkei and research institution Counterpoint Research, Changxin Memory's DRAM market share reached 8% in the third quarter, ranking fourth. In the NAND sector, Yangtze Memory's market share in the third quarter was 13%.
China-South Korea Storage Technology Gap and Future Competition
Due to the US blocking the export of key equipment such as EUV to China, China's expansion has slowed down. However, the technological gap between China and South Korea in the general DRAM market is less than one year.
Korean media believe that with the arrival of the 3D DRAM era in 2030, the competitive relationship may change again. 3D DRAM is a product that stacks memory cells upwards. When the 3D DRAM era comes, the demand for EUV lithography equipment will decrease, which may become an opportunity for Chinese enterprises to overtake.
Professor Hwang Cheol-seong from the Department of Materials Science and Engineering at Seoul National University said that, looking at the level of memory technology alone, the gap between South Korea and China has almost disappeared. When the 3D DRAM era arrives in five years, China will further rise.
Seven modules released: Full-scenario "heavy firepower coverage"
Not only are the chips strong, Changxin also launched seven module forms at once, including UDIMM, CUDIMM, SODIMM, CSODIMM, RDIMM, MRDIMM, and TFF MRDIMM.
One sentence summary: From ultra-thin notebooks to computing monsters in data centers, Changxin has covered everything this time.
It is particularly worth noting that Changxin not only presented CUDIMM and CSODIMM (memory with clock drivers) for consumer-level enthusiasts, but also demonstrated MRDIMM and TFF MRDIMM for servers. These two modules represent the highest technical difficulty in the storage industry and were specifically designed to solve the "memory wall" problem in servers. Being able to overcome these tough challenges shows that Changxin has the ability to provide system-level solutions for top global server manufacturers.
Original article: https://www.toutiao.com/article/7576904695222993449/
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