China Delivers World's First Silicon-based Gallium Nitride RF Chip
The silicon-based gallium nitride (GaN) radio frequency (RF) chip independently developed by China Electronics Technology Group Corporation's No. 55 Institute has recently exceeded a cumulative delivery of 5 million units. This milestone marks the world’s first large-scale commercial deployment of such chips in intelligent terminal applications, providing robust hardware support for building an integrated space-air-ground information network and achieving comprehensive coverage and high-speed connectivity.
The integrated space-air-ground information network is a critical infrastructure for future 6G communications, commercial aerospace, low-altitude economy, and emergency communications. Among these, cost-effective, high-performance power amplifier chips are regarded as the "heart of signals," directly determining the transmission speed, coverage range, and operational stability of communication systems.
Currently, China’s commercial aerospace industry, low-altitude economy, 6G research and development, and information and communications technology sectors are accelerating their growth, leading to a surge in demand for low-cost, high-performance RF chips.
According to reports, this series of silicon-based gallium nitride RF chips features outstanding characteristics including high power output, high efficiency, ultra-wide bandwidth, and high reliability, precisely meeting the stringent technical requirements of space-air-ground integrated communications for RF power amplifiers in terms of high efficiency and high linearity.
This breakthrough effectively addresses long-standing industrialization challenges in high-end RF chips, offering solid support for establishing a seamless, all-terrain, and round-the-clock space-air-ground communication network, while also accelerating the global vision of uninterrupted communication and ubiquitous connectivity across all things.
Original article: toutiao.com/article/1867214981724233/
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