Foreign media: A Sino-US joint research team led by the University of Science and Technology of China recently published an important study in the journal "Science," announcing the development of a breakthrough "self-etching" semiconductor manufacturing technology. This technology solves the fatal flaw of traditional lithography machines when processing 2D lead halide perovskite materials.
Traditional lithography uses laser vertical etching, and lateral light scattering causes uncontrolled damage, especially in ultra-thin, flexible, and unstable 2D lattice materials. This process achieves the world's first controlled lateral microstructure processing, creating complex and fine structures within ultra-thin perovskite layers without damaging the material's physical structure.
This method opens up a new path for developing high-performance light-emitting devices and integrated semiconductor equipment, and is expected to surpass the current mainstream electronic products' traditional lithography precision limits. The achievement adds a controlled lateral dimension in two-dimensional space, providing the possibility for a revolutionary improvement in semiconductor performance.
Original article: toutiao.com/article/1855304526070792/
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