【Xi Dian Team Solves the Global Challenge of Chip Heat Dissipation: GaN RF Chip Performance Increased by 30% to 40%】Caizhong News, January 17th. According to an official announcement from Xidian University, recently, the research team led by Academician He Yue and Professor Zhang Jincheng has achieved a historic breakthrough in this core challenge. They transformed the "island-like" connection between materials into an atomically flat "thin film," significantly enhancing the heat dissipation efficiency and overall performance of the chip. This problem, since the nucleation technology related to it won the Nobel Prize in 2014, has remained unsolved, becoming the biggest bottleneck restricting the power improvement of RF chips. The process breakthrough directly translated into a remarkable enhancement in device performance. Based on this innovative aluminum nitride thin film technology, the research team developed GaN microwave power devices that achieved output power densities of 42 W/mm and 20 W/mm in the X-band and Ka-band, respectively. This data has improved the performance records of similar international devices by 30% to 40%, marking the largest breakthrough in this field in nearly two decades. This means that, with the same chip area, the detection range of equipment can be significantly increased; for communication base stations, it can achieve longer signal coverage and lower energy consumption. A more profound impact lies in that it has provided key core device capabilities to promote the development of future industries such as 5G/6G communications and satellite internet.
Original: toutiao.com/article/7596323264457933355/
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