According to media reports, Changxin Memory plans to release an End of Life (EOL) notice for its DDR4 products targeting server and PC applications, with the latest cessation of supply expected in the first half of 2026, focusing entirely on DDR5 and high bandwidth memory (HBM). The EOL notice is anticipated to be released in the third quarter. However, downstream enterprises have reported that currently, Changxin's DDR4 products are almost out of stock in the market. Previously, Samsung Electronics and SK Hynix had announced the retirement of older processes, but chose to retain the 1z-nanometer process DDR4 capacity, which does not require EUV lines, maintaining limited supply in the future. Changxin Memory initially held a market share of only 2%, and by the end of 2025, its monthly capacity is expected to reach 280,000 wafers, with potential to exceed 300,000 wafers, equivalent to 15% of global DRAM production. As capacity expands, Changxin is rapidly transitioning to DDR5. By the end of 2025, Changxin's DDR5 capacity is expected to account for more than 60% of total capacity together with LPDDR4 and LPDDR5. In the future, Changxin Memory will no longer develop standard DDR4 products, retaining only some lines to produce DDR4 products for GigaDevice Innovation to ensure supply in the consumer market. In addition to DDR5, it is rumored that Changxin Memory is also developing a "high-end" HBM solution, which is likely referring to HBM3. According to insider information, domestic storage chip manufacturer Changxin Memory is expected to go public this year, with an expected valuation exceeding 140 billion RMB. Changxin Memory is one of the few large companies in China's semiconductor industry and is also one of China's largest DRAM storage chip manufacturers. The company is China's largest DRAM manufacturer, primarily producing DRAM chips used in personal computers, servers, and smartphones. Changxin Memory's competitors include global leading storage chip manufacturers such as Samsung Electronics, SK Hynix, and Micron Technology. Changxin Memory's IPO will provide more funds to expand capacity and research and development, narrowing the technological gap with international giants. According to South Korean media reports, Samsung Electronics is about to exit the multi-level cell (MLC) NAND flash memory sector. Sources revealed that Samsung plans to stop accepting new orders for MLC NAND flash memory after June. Moreover, Samsung informed a client that its MLC NAND prices are rising, prompting the client to seek alternative supply lines. Meanwhile, LG Display, a South Korean panel manufacturer, is actively seeking replacement suppliers for Samsung's MLC NAND. LG Display mainly uses Samsung's MLC NAND in 4GB eMMC for large OLED panels. Currently, LG Display's eMMC suppliers include Samsung, Legendsemi Technology, and Kioxia, among which Legendsemi Technology's eMMC also depends on Samsung's MLC NAND, while Kioxia supplies LG Display using its own MLC NAND. With Samsung exiting the MLC NAND field, its resources may further focus on TLC (three-layer) and QLC (four-layer) NAND flash memory. According to Mordor Intelligence statistics, TLC is currently the mainstream in the global NAND market, accounting for as much as 62% of global NAND sales. Original article: https://www.toutiao.com/article/7509315803871773211/ Disclaimer: This article solely represents the author's viewpoint. Please express your opinion by clicking the 'Like' or 'Dislike' button below.