South Korean media: China has developed the fastest flash memory element in the world!

On May 11, a South Korean newspaper, "Everyday Economy," published an article stating that researchers from Fudan University in Shanghai have developed the fastest flash semiconductor element in the world, achieving a speed of 400 picoseconds (1 picosecond = one trillionth of a second). Compared to ordinary flash memory which takes several microseconds (1 microsecond = one millionth of a second), the speed has increased by more than 100,000 times.

The research team led by Professor Zhou Peng and Researcher Liu Chunsen from Fudan University successfully developed the "Dawning" picosecond flash memory element, which is currently the fastest semiconductor charge storage element humans have mastered. The relevant research results were published in the international top journal "Nature."

The current fastest memory is SRAM and DRAM. These are volatile memories, with the drawback that they cannot store data when power is off, and they consume high power and have high manufacturing costs. On the other hand, flash memory, as a non-volatile memory, has the advantages of being able to store data even when power is off and having low energy consumption, but its disadvantage is that it is slow. The research team has been focusing on developing non-volatile memory.

Liu Chunsen, a young researcher at the Institute of Semiconductor Chips at Fudan University who leads this research, stated in the press release issued by Fudan University, "We believed that the traditional theory could not surpass the speed limit, so we introduced a new research method. We used the 2D Gaussian model to theoretically predict the hot carrier injection phenomenon and developed the world's fastest 'Dawning' flash memory based on this."

After initially proposing the theoretical model in 2021, the research team developed an ultra-high-speed flash memory element with an 8-nanometer channel last year, breaking through the physical limits of 15-nanometer silicon-based flash memory.

The research team said, "We hope to bring the semiconductor chip combined with CMOS technology to the market within the next five years."

Original source: https://www.toutiao.com/article/1831825431826459/

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