Foreign Media: Chinese researchers have announced a breakthrough in the production of two-dimensional semiconductor materials, promoting the development of next-generation high-performance electronic products.
This technology has the potential to replace silicon materials and solves the problem of uniformly and high-quality manufacturing of two-dimensional materials on a large scale. Currently, as semiconductor chips continue to evolve, transistor sizes are approaching the physical limits of silicon-based technology, making the search for next-generation semiconductor materials a focus of global research. Two-dimensional materials, such as molybdenum disulfide (MoS₂), are considered ideal successors for the post-Moore's Law era due to their atomic-level thin structure, high carrier mobility, and low power consumption. However, how to produce these materials uniformly on a large scale has always been a core challenge for commercialization.
A joint research team from Southeast University in Nanjing and Nanjing University has announced that they have developed a new technology capable of mass-producing two-dimensional material wafers. This breakthrough paves the way for the application of future high-performance electronic products.
Original article: toutiao.com/article/1857389447286791/
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