【Major News: Chinese Scientists Have Invented the World's First 2D Flash Memory Chip Using CMOS Integrated Circuit Technology】
On October 10, 2025 Beijing Time, the China Daily wrote in a press release:
Chinese scientists have invented the world's first 2D flash memory chip using CMOS integrated circuit technology. This breakthrough combines ultra-fast flash memory devices with the complementary structure of silicon-based metal oxide semiconductor or CMOS technology (integrated circuit building technology). The chip supports 8-bit instruction operations, 32-bit high-speed parallel operations, and random access, providing 94.3% storage cell performance. The speed of this chip exceeds current flash memory technology, making it the first engineering implementation of a 2D silicon-based hybrid flash memory chip.
Due to the development of artificial intelligence technology, due to the limited information transmission speed of existing technology, and high energy consumption, the demand for faster data access has increased sharply.
This chip was developed by a group of researchers from Fudan University. The chips are usually made of silicon, with a wafer thickness of hundreds of micrometers, and the thinnest can reach tens of nanometers thick. Two-dimensional semiconductor materials are only as thick as atoms, that is, less than 1 nanometer. "As a new material structure, two-dimensional semiconductors are not available in any integrated circuit factory in the world. Scientists will cooperate with technology companies to implement this project. They hope their technology can fundamentally change traditional memory architecture, providing faster and more energy-efficient data processing for artificial intelligence and big data technologies."
Original: www.toutiao.com/article/1845604576501783/
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